Lateral junction waveguide type photodiode for membrane photonic circuits

Author

Kondo, Daishi ; Okumura, Takashi ; Ito, H. ; Seunghun Lee ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

A lateral junction type photodiode grown on a semi-insulating InP substrate was realized by 3-step OMVPE growth. The responsivity of 0.27 A/W, 3 dB bandwidth of 6 GHz and 7.5 GHz at a bias voltage of 0 V and -2 V, respectively, were obtained for the stripe width of 1.4 μm and device length of 220μm. An error free transmissions up to 6 Gbps at 0 V were confirmed.

Keywords

III-V semiconductors; MOCVD; indium compounds; integrated optics; membranes; optical waveguide components; photodiodes; InP; OMVPE growth; frequency 6 GHz; frequency 7.5 GHz; lateral junction waveguide type photodiode; membrane photonic circuits; organometallic chemical vapour deposition; size 1.4 mum; size 220 mum; Biomembranes; Circuits; Electromagnetic waveguides; Gold; Optical devices; Optical interconnections; Optical pumping; Optical waveguides; Photodiodes; Waveguide junctions; Lateral junction; Membrane photonic circuits; Photodiode; Waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516217

Filename

5516217