Title :
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs
Author :
Basile, A.F. ; Mazzanti, A. ; Manzini, E. ; Verzellesi, G. ; Canali, C. ; Pierobon, R. ; Lanzieri, C.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Universitd di Modena e Reggio Emilia, Italy
Abstract :
Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.
Keywords :
III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; high electron mobility transistors; semiconductor device measurement; semiconductor device models; transient response; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT drain-lag phenomena; acceptor-like surface traps; gate source/drain contact ungated surfaces; pseudomorphic HEMT gate-lag phenomena; pulsed PHEMT characteristics; transient response; Analytical models; Doping; Gallium arsenide; Heating; Indium gallium arsenide; Irrigation; Numerical analysis; PHEMTs; Transient analysis; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174931
