• DocumentCode
    3116379
  • Title

    Electro-thermal parameter extraction of avalanche photodiode using quasi-DC optical pulses [pulsed laser radar applications]

  • Author

    Ghose, A. ; Weide, J. ; Kompa, G.

  • Author_Institution
    Dept. of High Frequency Eng., Kassel Univ., Germany
  • fYear
    2002
  • fDate
    18-19 Nov. 2002
  • Firstpage
    69
  • Lastpage
    74
  • Abstract
    For pulsed laser radar applications, the accuracy of measured distance depends largely on the rise time of received pulses. Due to nonlinearity of the avalanche photodiode in its breakdown region, the rise time of avalanche response changes with incident peak optical pulses. An accurate model of the avalanche photodiode is needed to predict correctly the time of arrival of incident pulses. In this work, we describe one experiment-based method of characterization of avalanche photodiodes to predict electrothermal parameters when used with pulsed laser radar. We applied pulsed optical power of 5 μs duration, 5% duty cycle, and measurement was carried out during the ´on´ period so that reliable measurement is possible without affecting the device thermal time constants.
  • Keywords
    avalanche photodiodes; electronic engineering computing; equivalent circuits; optical radar; optical testing; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; thermal analysis; 5 mus; avalanche photodiode electro-thermal parameter extraction; avalanche response rise time; device thermal time constants; equivalent circuit models; incident peak optical pulses; incident pulse arrival time prediction; photodiode breakdown region nonlinearity; pulsed laser radar measured distance accuracy; pulsed optical power duration/duty cycle; quasi-DC optical pulses; received pulse rise time; Avalanche photodiodes; Laser applications; Laser modes; Laser radar; Optical pulses; Parameter extraction; Power measurement; Pulse measurements; Radar applications; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
  • Print_ISBN
    0-7803-7530-0
  • Type

    conf

  • DOI
    10.1109/EDMO.2002.1174932
  • Filename
    1174932