Title :
FE modeling of Cu wire bond process and reliability
Author :
Yuan, Chen ; Weltevreden, Esther ; Van dan Akker, Pieter ; Kregting, René ; De Vreugd, Jan ; Zhang, G.Q.
Author_Institution :
TNO Sci. & Ind., Eindhoven, Netherlands
Abstract :
Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.
Keywords :
copper alloys; cost reduction; electronics packaging; finite element analysis; forming processes; lead bonding; reliability; FE modeling; IMC forming; bond pad structure; copper based wire bonding technology; cost reduction; electronic packaging industry; finite element analysis; gold wire; intermetallic compound; packaging reliability; stress pattern shift; wire interface; Compounds; Copper; Semiconductor device reliability; Silicon; Stress; Wire; Cu wire bond; IC BE structure (BEOL); IMC grow; epoxy curing;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
Conference_Location :
Linz
Print_ISBN :
978-1-4577-0107-8
DOI :
10.1109/ESIME.2011.5765789