Realisation of a SiGe-HBT direct down conversion receiver for UMTS base stations

Author

Bitzer, T. ; Karthau, U. ; Pascht, A. ; Weese, K.

Author_Institution

Alcatel SEL AG, Stuttgart, Germany

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

83

Lastpage

88

Abstract

In this work, the realisation of a direct down conversion receiver for the application in UMTS base stations is presented The analogue receiver functionality is completely integrated, based on a SiGe-HBT process with a transit frequency f_T=50 GHz and a minimum noise figure F_min=1 dB. It is designed to convert four neighbouring W-CDMA frequency channels of 3.84 MHz bandwidth simultaneously to the base band. The final carrier separation is done after the AD-conversion in the digital domain. Due to the requirements concerning image suppression, a low IQ imbalance in the analogue receiver part and an error compensation in the digital domain are essential. The receiver features a noise figure NF<2 dB and a power amplification in the range of 38 to 40 dB.

Keywords

3G mobile communication; Ge-Si alloys; analogue-digital conversion; circuit simulation; code division multiple access; error compensation; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated circuit noise; mixed analogue-digital integrated circuits; radio receivers; semiconductor materials; 1 dB; 2 dB; 3.84 MHz; 38 to 40 dB; 50 GHz; ADC; ASIC; SiGe; SiGe-HBT direct down conversion receivers; UMTS base stations; analogue receiver low IQ imbalance; base band conversion; channel bandwidth; digital domain carrier separation; error compensation; image suppression; neighbouring multi-W-CDMA frequency channel conversion; receiver power amplification; receiver transit frequency/minimum noise figure; 3G mobile communication; Application specific integrated circuits; Band pass filters; Bandwidth; Base stations; Error compensation; Frequency conversion; Image converters; Noise figure; Process design;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174935

Filename

1174935