Title :
A novel high voltage RF vertical MOSFET for high power applications
Author_Institution :
Discrete Power Technol. Group, Fairchild Semicond., San Jose, CA, USA
Abstract :
In this paper, an RF vertical MOSFET (VDMOS) is discussed. The results show a new vertical RF transistor that achieves excellent RF performance for high power applications utilizing a high breakdown capability. The VDMOS device can achieve an operating voltage of 48 V.
Keywords :
UHF field effect transistors; isolation technology; power MOSFET; semiconductor device breakdown; semiconductor device measurement; 2.1 GHz; 48 V; RF vertical double diffused MOSFET; VDMOS RF performance/operating voltage; high device breakdown voltage; high voltage power VDMOS; trench source charged balanced devices; Base stations; Costs; MOSFET circuits; Manufacturing; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Thermal management; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174937
