Title :
Research on Flashover Characteristics and the Physical Mechanism of High-Gain GaAs Photoconductive Switches
Author :
Ma, Cheng ; Shi, Wei ; Li, Mengxia ; Gui, Huaimeng ; Wang, Luyi ; Jiang, Huan ; Fu, Zhanglong ; Cao, Juncheng
Author_Institution :
Dept. of Appl. Phys., Xi´an Univ. of Technol., Xi´an, China
Abstract :
We have presented surface flashover characteristics of high-gain GaAs photoconductive semiconductor switch (PCSS) under the different output current. Under the low output current, the recorded flashover spectrum was different from the spark discharge spectrum of air. Based on the analysis of current waveform and the flashover spectrum, the physical mechanism of the flashover phenomena was discussed. Under the high output current, the recorded time waveform of flashover was periodic oscillation. This phenomenon was analyzed based on pinch effect. Finally, the mechanism of the surface flashover led to the damage of GaAs PCSS, which was demonstrated and analyzed.
Keywords :
III-V semiconductors; flashover; gallium arsenide; oscillations; photoconductivity; pinch effect; semiconductor switches; GaAs; high-gain photoconductive semiconductor switch; periodic oscillation; pinch effect; recorded flashover spectrum; spark discharge spectrum; surface flashover characteristics; Electric fields; Electrodes; Flashover; Gallium arsenide; Optical fibers; Plasmas; Surface waves; Photoconductive semiconductor switch (PCSS); current filament; damage; flashover spectrum; surface flashover;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2014.2327191