A lumped scalable physics-based model for silicon spiral inductors

This paper presents a high accuracy scalable physics-based model for planar spiral inductors, which takes into account both metal and substrate loss phenomena. The model was applied to inductors on an n⁺-doped radial-patterned ground shield, which was properly optimized by means of 3D EM simulations. After validating a simulation set-up in a 3D EM commercial tool by comparison with on-wafer experimental measurements, a wide set of inductors with different geometries were modeled and two-port simulations were compared with 3D simulations. A very accurate prediction of inductor performance parameters up to the self-resonance frequency was demonstrated.