Title :
Evaluation of commercially available SiC MESFETs for phased array radar applications
Author :
Walden, Mark G. ; Knight, Mathew
Author_Institution :
Roke Manor Res. Ltd., Romsey, UK
Abstract :
Silicon carbide MESFETs supplied by a commercial vendor were evaluated for their suitability for phased array radar applications. The results showed superior performance over traditional III-V semiconductors in respect of pulse droop, and demonstrated the increasing maturity of these wide bandgap devices.
Keywords :
hysteresis; microwave field effect transistors; phased array radar; power MESFET; semiconductor device measurement; silicon compounds; stability; wide band gap semiconductors; III-V semiconductors; MESFET performance; PAR; SiC; commercially available SiC MESFET; current hysteresis; high power microwave applications; phased array radar applications; pulse droop; pulse stability; wide bandgap devices; Hysteresis; MESFETs; Phase change materials; Phased arrays; Photonic band gap; Power generation; Pulse measurements; Radar applications; Silicon carbide; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174949
