Title :
1/f noise in CMOS transistors for analog applications
Author :
Brouk, Igor ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Noise measurements of the 1/f noise in p-mos and n-mos transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two “low noise” CMOS processes of 2 μm and 0.5 μm technologies are compared and it is found that the more advanced process, with 0.5 μm technology, exhibits significantly reduced 1/f noise, due to optimized processing. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits
Keywords :
1/f noise; CMOS analogue integrated circuits; MOSFET; semiconductor device noise; 0.5 micron; 1/f noise; 2 micron; CMOS transistor; analog circuit; n-MOS transistor; p-MOS transistor; process optimization; 1f noise; CMOS technology; Circuit noise; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Semiconductor device modeling; Transistors; Voltage;
Conference_Titel :
Electrical and electronic engineers in israel, 2000. the 21st ieee convention of the
Conference_Location :
Tel-Aviv
Print_ISBN :
0-7803-5842-2
DOI :
10.1109/EEEI.2000.924317
