Title :
Effect of polarization charges on electron transport properties of Al0.2Ga0.8N/GaN HFETs
Author_Institution :
Dept. of Phys., Tarbiat Moallem Univ. of Sabzevar, Iran
Abstract :
A self-consistent Monte Carlo simulation has been developed and used to model electron transport in wurtzite phase AlGaN/GaN heterojunction FETs. Planar Al0.2Ga0.8N/GaN HFET structures with a 78 nm Al0.2Ga0.8N pseudomorphically strained layer were simulated, where the spontaneous and piezoelectric polarization effects were taken into account. The polarization effects was shown to not only increase the current density, but also improve the electron transport in the interface layer by inducing a higher electron density to the positive polarized sheet and away from the buffer layer.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; current density; electron density; electron mobility; field effect transistors; gallium compounds; piezoelectricity; polarisation; semiconductor device models; wide band gap semiconductors; 78 nm; AlGaN-GaN; HFET structure pseudomorphically strained layers; buffer layers; current density; electron transport polarization charge effects; heterojunction FET electron transport; interface layer electron transport; positive polarized sheet electron density; self-consistent Monte Carlo simulations; spontaneous/piezoelectric polarization effects; wurtzite phase AlGaN/GaN; Aluminum gallium nitride; Buffer layers; Current density; Electrons; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Piezoelectric polarization;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174952
