Title :
Poly-Si thin layers for high speed photodetectors
Author :
Budianu, Elena ; Purica, Munizer ; Manea, Elena ; Danila, Mihai ; Gavrila, Raluca
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Abstract :
Thin layers of polycrystalline silicon as optically absorbing material for photodetecting applications represents a promising way for achieving fast devices which can be integrated in optoelectronic circuits for optical communication. One of this type of device is the MSM photodiode. In this paper, the preparation and characterization of polysilicon thin layers together with technological processes for an MSM type photodetector are presented. The crystalline structure, surface morphology and optical properties were investigated by AFM techniques, X-ray diffraction and spectrophotometer measurements. The dynamic response of the device was calculated with the designed parameters.
Keywords :
X-ray diffraction; atomic force microscopy; crystal structure; dynamic response; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; photodiodes; semiconductor device manufacture; semiconductor device measurement; silicon; spectrophotometry; surface morphology; 0.3 pF; 8 GHz; AFM techniques; MSM photodiodes; Si-SiO2; X-ray diffraction; crystalline structure; device dynamic response; optical communication devices; optical properties; optoelectronic circuits; photodetecting applications; poly-Si thin layer high speed photodetectors; polycrystalline silicon optically absorbing materials; spectrophotometry; surface morphology; Crystallization; High speed optical techniques; Integrated circuit technology; Integrated optics; Optical devices; Optical fiber communication; Optical materials; Photodetectors; Photodiodes; Silicon;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174957
