Title :
Power MOSFET RDSon under repetitive avalanche cycling
Author :
Bernoux, Béatrice ; Escoffier, René ; Jalbaud, Pierre ; Reynès, Jean-Michel ; Scheid, Emmanuel ; Dorkel, Jean-Marie
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
In this paper, a low voltage vertical power MOSFET is submitted to repetitive avalanche cycles under very high current (>400A) at high temperature (>150degC). Electrical characteristics such as BVDSS, IGSS, IDSS, VF, VGSth and RDSon are systematically tested along cycling. After a large number of avalanche pulses well above products requirements measurements show that RDSon decreases with the number of avalanche cycles whereas other parameters stay constant. With a simple model of RDSon measurement and new measurements such as the resistance of the metallization between two bonding wires we can connect this unexpected drop of RDSon measurement to MOSFET source electrode evolution.
Keywords :
avalanche breakdown; electrical resistivity; low-power electronics; metallisation; power MOSFET; semiconductor device breakdown; bonding wires; electrical characteristics; low voltage MOSFET; metallization; repetitive avalanche cycling; resistance; source IEEE electrode evolution; vertical power MOSFET; Decision support systems; Electric variables; Electrical resistance measurement; Low voltage; MOSFET circuits; Metallization; Power MOSFET; Pulse measurements; System testing; Temperature;
Conference_Titel :
Industrial Electronics, 2009. ISIE 2009. IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-4347-5
Electronic_ISBN :
978-1-4244-4349-9
DOI :
10.1109/ISIE.2009.5215664
