• DocumentCode
    3116931
  • Title

    Local strength measurement technique for miniaturised silicon-based components

  • Author

    Deluca, Marco ; Bermejo, Raul ; Pletz, Martin ; Morianz, Mike ; Stahr, Johannes ; Supancic, Peter ; Danzer, Robert

  • Author_Institution
    Inst. fur Struktur- und Funktionskeramik, Montanuniversitat Leoben, Leoben, Austria
  • fYear
    2011
  • fDate
    18-20 April 2011
  • Firstpage
    42373
  • Lastpage
    42464
  • Abstract
    The ongoing trend to further miniaturise electronic devices in Printed Circuit Board (PCB) technologies has pointed out the embedding of components as a principal design strategy. The reliability of the PCB relies on the functionality of the embedded components as well as on their structural integrity in order to survive the embedding process. In the present work, the biaxial strength of metallised silicon chips used in PCB technologies has been tested on both the substrate and the metallised side, evidencing a significant influence of the metallic contacts on the strength and the mechanical reliability of the component. Specimens tested with the metallised side under tension underwent an early failure (lower fracture load), whereby a statistical analysis of the strength distribution evidenced the presence of a narrower critical defect size distribution (i.e. higher mechanical reliability). This phenomenon was explained by means of (i) finite elements (FE) simulations of the loading conditions, and (ii) Focussed Ion Beam (FIB) analyses of the metal-silicon interface. It was concluded that the presence of a stress concentration in the interfacial area during loading induces pre-cracks which can act as critical defects upon load enhancement, thus causing failure for a very well defined range of loads.
  • Keywords
    circuit reliability; finite element analysis; focused ion beam technology; printed circuit testing; silicon; statistical analysis; FE simulation; FIB analysis; PCB reliability; Si; embedding process; finite elements simulations; focussed ion beam analysis; load enhancement; local strength measurement technique; mechanical reliability; metallised silicon chips; miniaturised silicon-based components; printed circuit board technology; statistical analysis; Copper; Government; Iron; Mechanical factors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
  • Conference_Location
    Linz
  • Print_ISBN
    978-1-4577-0107-8
  • Type

    conf

  • DOI
    10.1109/ESIME.2011.5765812
  • Filename
    5765812