Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasmaassisted bonding technology

Author

Li, Ling-Han ; Takigawa, Ryo ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit bonding; plasma materials processing; semiconductor quantum wells; silicon; spontaneous emission; III-V layer; InGaAsP-Si; direct current pumping; electrical pumping; heterointegration; highly doped silicon microwire; multiple quantum well; plasma-assisted bonding technology; semiconductive properties; spontaneous light emission; Bonding; III-V semiconductor materials; Optical materials; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Quantum well devices; Silicon; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516245

Filename

5516245