Title :
Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasmaassisted bonding technology
Author :
Li, Ling-Han ; Takigawa, Ryo ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit bonding; plasma materials processing; semiconductor quantum wells; silicon; spontaneous emission; III-V layer; InGaAsP-Si; direct current pumping; electrical pumping; heterointegration; highly doped silicon microwire; multiple quantum well; plasma-assisted bonding technology; semiconductive properties; spontaneous light emission; Bonding; III-V semiconductor materials; Optical materials; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Quantum well devices; Silicon; Wire;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516245
