Title :
Temperature dependence of avalanche multiplication in GaAs [p i n diodes]
Author :
Groves, C. ; Ghin, R. ; Harrison, C.N. ; David, J.P.R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
Measurements of avalanche photomultiplication and breakdown on a series of GaAs p+-i-n+ diodes show that the sensitivity of impact ionisation to temperature increases with i-region thickness. The effect is attributed to the increase in the number of phonon scattering events in the longer avalanche multiplication regions.
Keywords :
III-V semiconductors; avalanche breakdown; gallium arsenide; impact ionisation; leakage currents; p-i-n diodes; semiconductor device breakdown; semiconductor device measurement; 1 to 0.025 micron; 20 to 500 K; GaAs; GaAs p-i-n diode avalanche multiplication temperature dependence; avalanche breakdown; avalanche multiplication regions; avalanche photomultiplication; high electric field effects; i-region thickness; impact ionisation temperature sensitivity; leakage currents; phonon scattering events; Avalanche breakdown; Diodes; Gallium arsenide; Impact ionization; Leakage current; Phonons; Temperature dependence; Temperature distribution; Temperature measurement; Thickness measurement;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174962
