Title :
Low magnetic field mapping using an InGaAs-AlGaAs-GaAs 2 DEG Hall sensor
Author :
Haned, N. ; Missous, M.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
A new method of low magnetic field mapping using a two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields, using an x-y stepper motor scanner driven by a PC is reported. The scanner was used to map features in bank note detection, and magnetic digital signals of 50 μT magnitude were measured.
Keywords :
Hall effect transducers; III-V semiconductors; computerised instrumentation; field plotting; gallium arsenide; indium compounds; magnetic field measurement; magnetic sensors; stepping motors; two-dimensional electron gas; 2D electron gas devices; 50 muT; AlGaAs-InGaAs-GaAs; InGaAs-AlGaAs-GaAs 2DEG Hall sensors; PC driven x-y stepper motor scanners; bank note detection; bank note feature mapping; low magnetic field mapping; magnetic digital signal magnitude; magnetic field measurement; magnetic field sensors; Data acquisition; Electrons; Gas detectors; Instruments; Magnetic circuits; Magnetic field measurement; Magnetic sensors; Magnetometers; Sensor phenomena and characterization; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174963
