Title :
Mobility enhancement in indium-rich N-channel InxGa1−xAs HEMTs by application of <110> uniaxial strain
Author :
Xia, Ling ; del Alamo, Jesus A.
Author_Institution :
Microsyst. Technol. Labs. (MTL), Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
fDate :
May 31 2010-June 4 2010
Abstract :
As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of <;110> uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel core. The main impact of strain is found to be a modification of the electron effective mass and mobility. A comparison between the effect of <;110> strain in Si and InGaAs suggests that strain engineering can indeed be leveraged to improve transport properties in deeply scaled InGaAs FETs.
Keywords :
III-V semiconductors; aluminium compounds; effective mass; electron mobility; elemental semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; internal stresses; silicon; <;110> uniaxial strain; III-V field effect transistors; InxGa1-xAs; InAlAs-InGaAs; Si; channel core; deeply scaled FETs; electron effective mass; electron mobility; indium-rich N-channel HEMTs; mechanical strain; mobility enhancement; strain engineering; transport properties; Capacitive sensors; Effective mass; Electron mobility; FETs; HEMTs; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; MODFETs; Uniaxial strain;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516249
