Title :
A comprehensive study of nanoscale Field Effect Diodes
Author :
Manavizadeh, N. ; Pourfath, M. ; Raissi, F. ; Asl-Soleimani, E.
Abstract :
The performance of nanoscale Field Effect Diode as a function of the doping concentration and the gate voltage is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 as the doping concentration of source/drain regions increased from 1016 to 1021 cm-3. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.
Keywords :
MOSFET; nanoelectronics; semiconductor diodes; MOSFET; doping concentration; energy-delay product; gate voltage; intrinsic gate delay time; nanoscale field effect diodes; source-drain regions; Benchmark testing; Delay; Junctions; Logic gates; MOSFET circuits; Nanoscale devices; Performance evaluation;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
Conference_Location :
Linz
Print_ISBN :
978-1-4577-0107-8
DOI :
10.1109/ESIME.2011.5765817
