Title :
DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics
Author :
Ho, Han-Chieh ; Fan, Ta-Wei ; Liau, Geng-Ying ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Chyi, Jen-Inn ; Ko, Chih-Hsin ; Kuan, Ta-Ming ; Hsieh, Meng-Kuei ; Lee, Wen-Chin ; Wann, Clement H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fDate :
May 31 2010-June 4 2010
Abstract :
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2μm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; high electron mobility transistors; indium compounds; plasma CVD; 2μm-gate-length depletion-mode; AlSb-InAs-AlSb; InAs-channel MOS-MODFET; PECVD; SiO2; complementary circuit devices; dc characteristics; drain current; frequency 14.5 GHz to 24 GHz; gate dielectrics; high-speed applications; low-power applications; maximum current-gain cut-off frequency; maximum oscillation frequency; metal-oxide-semiconductor modulation-doped field-effect transistor; size 100 nm; size 2 mum; small-bandgap channel materials; transconductance; Dielectric materials; Dielectric substrates; Epitaxial growth; Epitaxial layers; FETs; III-V semiconductor materials; MOS capacitors; Molecular beam epitaxial growth; Radio frequency; Semiconductor materials; InAs; metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET);
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516253
