Title :
Resistance degradation of CVD (Ba,Sr)TiO3 thin films for DRAMs and integrated decoupling capacitors
Author :
Basceri, C. ; Wells, M.A. ; Streiffer, S.K. ; Kingon, A.I. ; Bilodeau, S. ; Carl, R. ; Van Buskirk, P.C. ; Summerfelt, S.R. ; McIntyre, P.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba,Sr)TiO3 thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all the films studied
Keywords :
CVD coatings; DRAM chips; barium compounds; dielectric thin films; electrical resistivity; failure analysis; strontium compounds; thin film capacitors; (BaSr)TiO3; 1.6 V; 85 C; DRAM; activation energy; failure; integrated decoupling capacitor; polycrystalline MOCVD (Ba,Sr)TiO3 thin film; resistance degradation lifetime; Degradation; Electrical resistance measurement; Energy measurement; Extrapolation; Failure analysis; MOCVD; Temperature sensors; Thickness measurement; Transistors; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602709
