Title :
Temperature dependence of the electrical performance of SrBi2 Ta2O9 for non-volatile memory applications
Author :
Taylor, D.J. ; Jones, R.E. ; Chu, P.Y. ; Zurcher, P. ; White, B. ; Zafar, S. ; Gillespie, S.J.
Author_Institution :
Mater. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
Abstract :
Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2Pr), the non-volatile polarization (P nv), and the coercive field (EC) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and Pnv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70°C)
Keywords :
bismuth compounds; ferroelectric storage; strontium compounds; 0 to 70 C; SBT; SrBi2Ta2O9; coercive field; current voltage characteristics; electrical properties; fatigue resistance; ferroelectric nonvolatile memory; nonvolatile polarization; remanent polarization; retention; temperature dependence; Capacitance measurement; Ferroelectric materials; Polarization; Pulse circuits; Pulse measurements; Switching circuits; Temperature dependence; Time measurement; Velocity measurement; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602710
