Title :
Impact of VDMOS source metallization ageing in 3D FEM wire lift off modeling
Author :
Marcault, E. ; Azoui, T. ; Tounsi, P. ; Breil, M. ; Bourennane, A. ; Dupuy, P.
Author_Institution :
CNRS, LAAS, Toulouse, France
Abstract :
Based on 3D FEM electro-thermal simulations, we explore the thermal impact of source metallization ageing inducing a bonding wire lift off on a VDMOS device. This kind of failure is usually modeled by changing the geometry of the assembly, without considering the physical properties evolution of aged materials such as the source metallization. This work aims to highlight the importance of taking into account material evolution due to ageing in 3D FEM electro-thermal simulations.
Keywords :
MOSFET; finite element analysis; semiconductor device metallisation; semiconductor device models; thermal analysis; 3D FEM electrothermal simulations; 3D FEM wire lift off modeling; MOSFET; VDMOS device; VDMOS source metallization ageing; source metallization; Aging; Bonding; Equations; Finite element methods; MOSFET circuits; Metallization; Three dimensional displays;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
Conference_Location :
Linz
Print_ISBN :
978-1-4577-0107-8
DOI :
10.1109/ESIME.2011.5765828
