Title :
Fabrication of ferroelectric capacitors using RuO2/Pt electrode
Author :
Chung, Ilsub ; Kim, Chang Jung ; Chung, Chee Won ; In Kyeong Yoo
Author_Institution :
Mater. & Dev. Res. Cente, Samsung, Kyungki, South Korea
Abstract :
The ferroelectric capacitors are fabricated using RuO2/Pt electrode. PZT films are prepared by metal-organic decomposition (MOD) on sputter deposited electrodes. In particular, inductively coupled plasma (ICP) etcher is used to minimize the etching damage. In addition, TiO2 reaction barrier layer is also employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The better hysteretic properties were obtained Pt/RuO2/PZT/RuO2 /Pt ferroelectric capacitors. Enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The result implicates RuO2/Pt would be a good electrode for a nonvolatile memory application
Keywords :
dielectric hysteresis; electrodes; ferroelectric capacitors; lead compounds; piezoceramics; platinum; ruthenium compounds; PZT film; Pt-RuO2-PbZrO3TiO3-RuO2-Pt; Pt-RuO2-PZT-RuO2-Pt; RuO2/Pt electrode; TiO2 reaction barrier layer; fabrication; ferroelectric capacitor; hysteresis; inductively coupled plasma etching; metal-organic decomposition; microstructure; nonvolatile memory; passivation layer; sputter deposition; Capacitors; Degradation; Electrodes; Fabrication; Ferroelectric films; Ferroelectric materials; Passivation; Plasma applications; Plasma properties; Sputter etching;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602717
