Annealing experiments on InP/InGaAs single and double HBTs grown by molecular beam epitaxy

Author

Sexton, J. ; Missous, M.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

300

Lastpage

305

Abstract

InP/InGaAs SHBTs (sample#1444) and DHBTs (sample#1450) have been successfully grown by solid source molecular beam epitaxy using a GaP decomposition source developed at UMIST. Thermal stability studies were performed on the heavily beryllium doped (1.5×10¹⁹ cm^-3) HBTs using post-growth annealing in an N₂ ambient. The devices were annealed between a temperature range of 350-550°C for 15 minutes prior to fabrication and their I-V characteristics compared. Excellent thermal stability was found with the major transistor parameters hardly affected up to annealing temperatures of 500°C.

Keywords

III-V semiconductors; annealing; beryllium; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device measurement; thermal stability; 15 min; 350 to 550 C; 500 C; Be; DHBT; GaP; GaP decomposition sources; HBT I-V characteristics; InP-InGaAs; InP/InGaAs single/double HBT; MBE; N₂; SHBT; annealing temperature range/time; heavily beryllium doped HBT; nitrogen ambient post-growth annealing; solid source molecular beam epitaxy; thermal stability; Annealing; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Solids; Temperature distribution; Thermal stability; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174975

Filename

1174975