Investigation of ion bombardment of GaAs-based HBTs with InGaAs capping layer

Author

Subramaniam, S.C. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

306

Lastpage

310

Abstract

We have investigated He⁺-ion bombardment on a lattice-matched multi-layer In_0.5Ga_0.5P/GaAs HBT structure with InGaAs capping layer. A single energy implantation of helium-ion was tested on this structure at 600 keV with a dose of 3×10¹⁵ cm^-2 at room temperature. Post implant annealing was performed for 60 s from 50 to 600°C. A maximum achievable sheet resistance of 2×10⁸ Ω/sq was recorded for the GaAs-based base and collector layers and 3×10⁵ Ω/sq for the emitter-capping layer. Analysis shows that isolation of the whole HBT structure is affected due to the introduction of a narrow-bandgap InGaAs capping layer.

Keywords

III-V semiconductors; annealing; gallium compounds; helium ions; heterojunction bipolar transistors; indium compounds; ion implantation; semiconductor device measurement; 20 C; 50 to 600 C; 60 s; 600 keV; GaAs-based base/collector layers; HBT structure isolation; He; He⁺-ion bombardment; InGaAs-InGaP-GaAs; emitter-capping layers; helium-ion single energy implantation dose; heterojunction bipolar transistors; lattice-matched multi-layer HBT structures; maximum achievable sheet resistance; narrow-bandgap InGaAs capping layer GaAs-based HBT; post implant annealing time/temperature; Circuits; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Isolation technology; Optical materials; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174976

Filename

1174976