III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding

We have developed III-V-OI MISFETs on Si with buried SiO₂ and Al₂O₃ layers fabricated by low damage and low temperature direct wafer bonding processes. The III-V-OI MISFETs with both buried SiO₂ and Al₂O₃ layers have demonstrated the high electron mobility of 1200 cm²/Vs. In addition, we found that the buried Al₂O₃ layers can improve the interface condition between III-V and the buried oxide layers, leading to the higher electron mobility of III-V-OI MISFETs even in the high electric field than that of Si MOSFETs. These high performance transistors will open up the way to the future high performance logic LSI systems.