Title :
Temperature dependence of In0.53Ga0.47As ionisation coefficients
Author :
Yee, M. ; Ng, W.K. ; David, J.P.R. ; Houston, P.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
Avalanche multiplication in In0.53Ga0.47As has been determined from photomultiplication measurements over the temperature range of 20 - 300 K for a series of p-i-n and n-i-p diodes. A negative temperature dependence is observed in the avalanche multiplication of In0.53Ga0.47As at electric fields over 200 kV/cm, contrary to the positive temperature dependence of collector multiplication previously observed in InP/In0.53Ga0.47As heterojunction bipolar transistors. Based on the photomultiplication measurements on p-i-n and n-i-p diodes, the temperature dependence of the electron and hole ionisation coefficient from 20 - 300 K in In0.53Ga0.47As is also examined.
Keywords :
III-V semiconductors; avalanche breakdown; gallium arsenide; impact ionisation; indium compounds; leakage currents; p-i-n diodes; semiconductor device breakdown; semiconductor device measurement; 20 to 300 K; InGaAs; InGaAs ionisation coefficient temperature dependence; avalanche multiplication; breakdown voltage; collector multiplication; electron/hole impact ionisation coefficients; heterojunction bipolar transistors; leakage currents; n-i-p diodes; negative/positive temperature dependence; p-i-n diode temperature range; photomultiplication; Current measurement; Dark current; Electrons; Heterojunction bipolar transistors; Ionization; P-i-n diodes; Semiconductor diodes; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174978
