Title :
Lead zirconate titanate thick films: Electrical properties and characterization by a LDV technique
Author :
Drogui, P. ; Gonnard, P. ; Lebrun, L. ; Troccaz, M. ; Barbier, D.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
The preparation and properties of thick (30-200 μm) polycrystalline hard PZT films have been studied. The layers were deposited on Al2O3 substrates by spin-on and sintered at temperatures near 1050°C. Natural sintering or RTA are used. The field induced displacements of the films are measured by LDV. It is shown that the permittivity and the piezoelectric coefficient d 33 depend on the film thickness. A simple interface layer model is presented to explain such a behaviour. The best films, obtained by RTA at 1150°C, have a permittivity and a d33 value more than one third of the bulk ceramic
Keywords :
ferroelectric thin films; laser velocimetry; lead compounds; permittivity; piezoceramics; piezoelectric thin films; rapid thermal annealing; sintering; thick films; 1050 C; 1150 C; Al2O3 substrate; LDV; PZT; PbZrO3TiO3; RTA; electrical properties; interface layer model; laser Doppler vibrometry; permittivity; piezoelectric coefficient; polycrystalline PZT thick film; sintering; spin-on deposition; Costs; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Permittivity measurement; Piezoelectric films; Piezoelectric materials; Printing; Thick films; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602726
