High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

Author

Sugiyama, Hiroki ; Matsuzaki, Hideaki ; Yokoyama, Haruki ; Enoki, Takatomo

Author_Institution

NTT Photonics Labs., NTT Corportion, Atsugi, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich In_xGa_1-xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In_0.53Ga_0.47As/In_0.8Ga_0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm²/Vs at the sheet carrier concentration (Ns) of 2.1×10¹² cm^-2, which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.

Keywords

III-V semiconductors; MOCVD; composite materials; electron mobility; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; In_0.53Ga_0.47As-In_0.8Ga_0.2As; MOVPE; high electron mobility composite-channel modulation-doped structures; metal-organic vapor-phase epitaxy; temperature 293 K to 298 K; Electron mobility; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516265

Filename

5516265