Title :
High doping effects on in-situ Ohmic contacts to n-InAs
Author :
Baraskar, Ashish ; Jain, Vibhor ; Wistey, Mark A. ; Singisetti, Uttam ; Lee, Yong Ju ; Thibeault, Brian ; Gossard, Arthur ; Rodwell, Mark J.W.
Author_Institution :
ECE, Univ. of California, Santa Barbara, CA, USA
fDate :
May 31 2010-June 4 2010
Abstract :
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0.6±0.4)×10-8 Ω-cm2 for samples with 8.2×1019 cm-3 active carrier concentration. The contacts were found to remain stable on annealing at 250°C for 1 hour.
Keywords :
Fermi level; III-V semiconductors; annealing; carrier density; conduction bands; contact resistance; elemental semiconductors; indium compounds; molybdenum; ohmic contacts; semiconductor doping; semiconductor-metal boundaries; silicon; Fermi level; Mo-InAs:Si; active carrier concentration; annealing; conduction band; doping; specific contact resistivity; transmission line model; Annealing; Conductivity; Contact resistance; Doping; Electrical resistance measurement; Gallium arsenide; Ohmic contacts; Surface contamination; Surface resistance; Transmission line measurements;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516269
