DocumentCode
311760
Title
Effects of film thickness and process parameters on the properties of SrBi2Ta2O9 ferroelectric capacitors for non-volatile memory applications
Author
Chu, Peir Y. ; Taylor, Deborah J. ; Zurcher, Peter ; White, Bruce E. ; Zafar, Sufi ; Jiang, Bo ; Melnick, Brad ; Jones, Robert E., Jr. ; Gillespie, Sherry J. ; Chen, Wei ; Cave, Nigel
Author_Institution
Mat. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
329
Abstract
Effects of processing parameters and thickness on the properties of spin-on SrBi2Ta2O7 (SET) films were investigated. Film crystallinity was improved with heat treatment but surface roughness also increased significantly above 400°C. Capacitor polarization was found to be a function of electric field, based on the results of the films in the thickness range of 0.11-0.44 μm. Thinner films saturate at a lower voltage but result in a higher leakage current and lower capacitor yield. According to an interfacial layer model, the thickness-independence dielectric constant, coercive field, and breakdown field for the spin-on SET films were calculated to be 282, 2.5 V/μm, and 28.1 V/μm, respectively. The electrical data indicate films of 0.19 μm thick should be used for integration with the current processing parameters
Keywords
bismuth compounds; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; strontium compounds; SET ferroelectric capacitor; SrBi2Ta2O9; breakdown field; coercive field; crystallinity; dielectric constant; film thickness; heat treatment; interfacial layer model; leakage current; nonvolatile memory; polarization; process parameters; spin-on film; surface roughness; yield; Capacitors; Crystallization; Dielectric thin films; Heat treatment; Leakage current; Polarization; Rough surfaces; Surface roughness; Surface treatment; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.602760
Filename
602760
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