DocumentCode :
311761
Title :
Size effects in barium titanate thin film heterostructures with conductive oxide electrodes
Author :
Maria, J-P. ; Trolier-McKinstry, S. ; Schlom, D.G.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Volume :
1
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
333
Abstract :
Thin film, small particle, and fine grained materials have long been known to behave differently from their bulk counterparts, and as such, these differences have been termed size effects. The origins of size effects, though well known for some materials, in ferroelectrics are largely misunderstood. Currently inhibiting the application of ferroelectrics, these effects become commercially important in devices such as MEMs, MLCs and DRAMs. Included in such structures are ferroelectric layers with thicknesses or grains approaching the critical size below which ferroelectric properties degrade. Expitaxial BaTiO3 thin film heterostructures utilizing conductive oxide electrodes have been deposited by PLD, while 4-circle X-ray diffraction, electrical property measurements, and RBS have been applied to characterize the films. The Curie temperatures for BaTiO3 films were found to be depressed by as much as 150°C, with the magnitude of this depression believed to be dependent upon the coherent crystal size of the films
Keywords :
Rutherford backscattering; X-ray diffraction; barium compounds; ferroelectric Curie temperature; ferroelectric thin films; pulsed laser deposition; size effect; BaTiO3; Curie temperature; PLD; RBS; X-ray diffraction; coherent crystal size; conductive oxide electrode; electrical property; epitaxial barium titanate thin film heterostructure; ferroelectric material; fine grained material; size effect; small particle material; Barium; Conductive films; Degradation; Electrodes; Ferroelectric films; Ferroelectric materials; Sputtering; Titanium compounds; Transistors; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.602761
Filename :
602761
Link To Document :
بازگشت