Title :
Single quantum dot laser using photonic crystal nanocavity
Author :
Nomura, M. ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Nano Quantum Inf. Electron., Univ. of Tokyo, Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We demonstrate laser oscillation in InAs/GaAs single quantum dot (SQD) and photonic crystal nanocavity coupled systems. The coupling SQD provides most of the gain and distinct SQD feature is observed in the photon statistics. Depending on the light-matter coupling strength, laser oscillation starts in the weak- or strong-coupling regime. It is significant that the polariton doublet is still observed at the threshold pump power in the strongly coupled system. This fact indicates that the coherent exchange of quanta between the SQD and the cavity is still sustained under laser oscillation in the intermediate state.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; optical pumping; photon counting; photonic crystals; quantum dot lasers; InAs-GaAs; laser oscillation; light matter coupling strength; photon statistics; photonic crystal nanocavity; single quantum dot laser; threshold pump power; Atomic beams; Gallium arsenide; Gas lasers; Laser modes; Laser tuning; Optical coupling; Photonic crystals; Pump lasers; Quantum dot lasers; Semiconductor lasers;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516281