Title :
Epitaxially deposited SrVO3 conducting films by laser ablation and metal organic chemical vapor deposition
Author :
Ritums, D.L. ; Wu, N.J. ; Liu, D. ; Zhong, Q. ; Chen, Y.M. ; Zhang, X. ; Chou, P.C. ; Ignatiev, A.
Author_Institution :
Texas Center for Supercond., Houston Univ., TX, USA
Abstract :
We have grown epitaxial thin films (100-200 nm) of SrVO3 with pulsed laser deposition and metal organic chemical vapor deposition on Si, YSZ, MgO, LaAlO3, and and SrTiO3 . These films range from insulating to semiconducting to metallic, depending on growth conditions. Resistivity has been measured with the standard four point method, and has been found to be as low as 1 μΩ-cm for SVO on Si with a YSZ buffer layer. This is comparable to 10 μΩ-cm for Pt. XRD studies have also been done to determine the crystal structure of the films
Keywords :
CVD coatings; X-ray diffraction; crystal structure; electrical resistivity; epitaxial layers; ferroelectric materials; ferroelectric thin films; pulsed laser deposition; strontium compounds; vapour phase epitaxial growth; 1 muohmcm; 100 to 200 nm; LaAlO3; MgO; Si; SrTiO3; SrVO3; XRD; Y2O3Zr2O3; YSZ buffer layer; crystal structure; epitaxially deposited SrVO3 conducting films; laser ablation; metal organic chemical vapor deposition; resistivity; standard four point method; Chemical lasers; Chemical vapor deposition; Insulation; Optical pulses; Organic chemicals; Pulsed laser deposition; Semiconductor films; Semiconductor lasers; Semiconductor thin films; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602778
