DocumentCode :
3117764
Title :
n+/p ultra-shallow junction formation with plasma immersion ion implantation
Author :
Yang, B.L. ; Jones, Erin C. ; Cheung, Nathan W. ; Shao, Jiqun ; Wong, H. ; Cheng, U.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
1997
fDate :
35672
Firstpage :
7
Lastpage :
10
Abstract :
n+/p ultra-shallow junction formed by PH3 Plasma Immersion Ion Implantation (PIII) have been studied. Diodes with good electrical characteristics have been obtained and mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper
Keywords :
ion implantation; p-n junctions; PH3; diode; electrical characteristics; n+/p ultra-shallow junction; plasma immersion ion implantation; Diodes; Electric variables; Fabrication; Implants; Plasma accelerators; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma sheaths; Semiconductor diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
Type :
conf
DOI :
10.1109/HKEDM.1997.642287
Filename :
642287
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3117764
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