Title :
Effects of post-annealing on the leakage and dielectric properties of sputter-deposited Pt/Ba0.5Sr0.5TiO3/Pt thin film capacitor
Author :
Fukuda, Yukio ; Numata, Ken ; Aoki, Katsuhiro ; Nishimura, Akitoshi
Author_Institution :
Texas Instruments Japan Ltd., Ibaraki, Japan
Abstract :
This paper describes electrical properties of sputter-deposited Pt/Ba0.5Sr0.5TiO3/Pt capacitor. Particular attention will be paid to the effects of a post-annealing in an oxygen ambient on the properties. It is shown that leakage and dielectric properties of the capacitor are drastically improved by the post-annealing. These improvements are attributed to decrease in an oxygen vacancy concentration of the dielectric
Keywords :
annealing; barium compounds; dielectric thin films; platinum; sputtered coatings; strontium compounds; thin film capacitors; Pt-Ba0.5Sr0.5TiO3-Pt; dielectric properties; leakage; post-annealing; sputter-deposited Pt/Ba0.5Sr0.5TiO3 /Pt thin film capacitor; vacancy concentration; Capacitors; Current density; Dielectric devices; Dielectric losses; Dielectric substrates; Dielectric thin films; Electrodes; Electrons; Sputtering; Variable speed drives;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602782
