Advances in the growth of lattice-matched III-V compounds on Si for optoelectronics

Author

Kunert, Bernardette ; Volz, Kerstin ; Stolz, Wolfgang

Author_Institution

NAsP III/V GmbH, Germany

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

The novel direct band gap, dilute nitride Ga(NAsP)-material system allows for the first time the monolithic integration of a III/V laser material lattice matched to Si substrate. This lattice-matched approach offers the possibility for a high-quality, low defect density integration of a III/V-laser material potentially leading to long-term stable laser devices on Si-substrate. The present paper introduces this novel integration approach and discuss the monolithically growth in line with optical properties of first laser devices grown on exactly oriented (001) Si substrates.

Keywords

III-V semiconductors; crystal defects; gallium compounds; integrated optoelectronics; semiconductor lasers; vapour phase epitaxial growth; wide band gap semiconductors; Ga(NAsP)-Si; III-V laser material; direct band gap; lattice-matched III-V compounds; long term stable laser device; low defect density integration; optoelectronics application; Diode lasers; III-V semiconductor materials; Laser stability; Lattices; Monolithic integrated circuits; Optical materials; Photonic band gap; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516285

Filename

5516285