DocumentCode :
311781
Title :
Structural characterisation of sol-gel PZT thin films
Author :
Impey, S.A. ; Huang, Z. ; Patel, A. ; Watton, R. ; Whatmore, R.W.
Author_Institution :
SIMS, Cranfield Univ., UK
Volume :
1
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
439
Abstract :
The techniques of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission and scanning transmission electron microscopy (TEM/STEM) have been applied to the analysis of thin films of Pb(Zr0.30Ti0.70)O3 (PZT30/70) deposited at low-temperatures (510°C) by a sol-gel process onto Pt/Ti electrodes on SiO2/Si 100 substrates. It is found that the platinum film is highly oriented with the 111 axis perpendicular to the substrate plane. The ferroelectric film tends to crystallise epitaxially upon this as columnar crystals. There are indications of the existence of a second metallic phase at the interface between the platinum and the PZT30/70 film which may be associated with its nucleation. The TEM shows the boundaries between individual sol-gel layers, although the growing crystallites of the PZT30/70 propagate through these boundaries unhindered. The XPS and Auger analysis have shown that Pb penetrates through the Pt layer to the underlying Ti layer, even at the low crystallisation temperatures used. There is also clear evidence for diffusion of the Zr and Ti prior to, or during the crystallisation process, so that the Zr migrates to the surface of each sol-gel layer
Keywords :
X-ray diffraction; X-ray photoelectron spectra; ferroelectric thin films; lead compounds; piezoceramics; scanning-transmission electron microscopy; sol-gel processing; transmission electron microscopy; 510 C; Auger analysis; PZT; PbZrO3TiO3; X-ray diffraction; X-ray photoelectron spectroscopy; columnar crystal; crystallisation; diffusion; ferroelectric; nucleation; scanning transmission electron microscopy; sol-gel PZT thin film; structure; transmission electron microscopy; Crystallization; Electrons; Ferroelectric films; Platinum; Spectroscopy; Substrates; Transistors; X-ray diffraction; X-ray scattering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.602783
Filename :
602783
Link To Document :
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