Title :
Characterization of sol-gel derived PZT and PLZT thin films
Author :
Kurchania, Rainish ; Milne, Steven J.
Author_Institution :
Div. of Ceramics, Leeds Univ., UK
Abstract :
Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO2 /Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700°C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700°C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 μC cm-2 (at 300 kV cm-1, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively
Keywords :
ferroelectric thin films; lanthanum compounds; lead compounds; piezoceramics; sol-gel processing; 500 to 700 C; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; crystallization; dielectric properties; diol precursor; ferroelectric thin film; firing; microstructure; relative permittivity; remanent polarization; sol-gel synthesis; spin coating; Coatings; Dielectric substrates; Dielectric thin films; Firing; Lanthanum; Semiconductor thin films; Sputtering; Temperature; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602785
