Characterization of sol-gel derived PZT and PLZT thin films

Author

Kurchania, Rainish ; Milne, Steven J.

Author_Institution

Div. of Ceramics, Leeds Univ., UK

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

447

Abstract

Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO₂/Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700°C) on crystallization, microstructure, ferroelectric and dielectric properties have been investigated. Films fired at 700°C for 15 minutes with 0, 2 and 5 mole percent lanthanum levels had values of remanent polarization of 31, 23 and 14 μC cm^-2 (at 300 kV cm^-1, 60 Hz) and corresponding relative permittivity values of 1485, 830 and 700 respectively

Keywords

ferroelectric thin films; lanthanum compounds; lead compounds; piezoceramics; sol-gel processing; 500 to 700 C; PLZT; PZT; PbLaZrO3TiO3; PbZrO3TiO3; crystallization; dielectric properties; diol precursor; ferroelectric thin film; firing; microstructure; relative permittivity; remanent polarization; sol-gel synthesis; spin coating; Coatings; Dielectric substrates; Dielectric thin films; Firing; Lanthanum; Semiconductor thin films; Sputtering; Temperature; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602785

Filename

602785