Title :
PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering
Author :
Lu, D.X. ; Pun, E.Y.B. ; Zhang, Y.L. ; Wong, E.M.W. ; Chung, P.S. ; Huang, L.B. ; Lee, Z.Y.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
Abstract :
We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500°C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick train film annealed at 650°C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 μm-thick thin film annealed at 600°C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm
Keywords :
annealing; dielectric losses; ferroelectric thin films; lead compounds; permittivity; piezoceramics; sputter deposition; PZT; PZT thin film; PbZrO3TiO3; Pt/Ti electrode; RF magnetron sputtering; Si substrate; annealing; coercive field; dielectric constant; dielectric loss; electrical properties; lattice parameter; perovskite phase; remnant polarization; structural properties; Annealing; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Electrodes; Polarization; Radio frequency; Sputtering; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602786
