Title :
Preparation and properties of Bi4Ti3O12 thin films by electron cyclotron resonance sputtering
Author :
Maiwa, Hiroshi ; Ichinose, Noboru
Author_Institution :
Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
Abstract :
Thin films of ferroelectric Bi4Ti3O12 were deposited on Pt- or Ir-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600°C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the Bi4Ti3O12 films on Pt/SiO2/Si were 10.9 μC/cm2 and 139 kV/cm, respectively. Those of the films on Ir/SiO2/Si were 3.6 μC/cm2 and 99 kV/cm, respectively
Keywords :
bismuth compounds; dielectric hysteresis; ferroelectric thin films; sputter deposition; 600 C; Bi4Ti3O12; coercive field; crystal structure; dielectric properties; electron cyclotron resonance sputtering; ferroelectric thin film; hysteresis loop; perovskite phase; remanent polarization; Bismuth; Cyclotrons; Dielectric substrates; Dielectric thin films; Electrons; Ferroelectric films; Ferroelectric materials; Semiconductor films; Semiconductor thin films; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602787
