Title :
Microstructure and ferroelectric properties of sol-gel PZT thin films on nickel alloy electrode for use with soda-lime glass substrate
Author :
Ogawa, Toshio ; Ujiie, Nonko ; Hukuta, Kouji
Author_Institution :
Dept. of Electron. Eng., Shizuoka Inst. of Sci. & Technol., Fukuroi, Japan
Abstract :
The Ni alloy electrode was used for a bottom electrode of PZT thin films prepared by sol-gel process. Although BaTiO3 films had consisted of a perovskite single phase, PZT films were composed of a perovskite phase with second phases of Pb3O4 and ZrTiO4 on the alloy electrode. In order to prevent the second phases forming, the heat treatment time of the electrode was increased to obtain the thicker Al2O3 layer on the alloy electrode. The second phases decreased with increasing the heat treatment time, however, the phases did not disappear. When BaTiO3 films were inserted between the electrodes and PZT films, the grain growth of PZT films was promoted by the existence of the BaTiO3 buffer layer, finally, the PZT single phase was obtained. As the tan δ of the films decreased with decreasing the amount of the second phases, it became 3.9%, the film of which possessed a remanent polarization of 20 μC/cm2
Keywords :
dielectric losses; ferroelectric thin films; heat treatment; lead compounds; piezoceramics; sol-gel processing; BaTiO3 buffer layer; PZT; PZT thin film; PbZrO3TiO3; ferroelectric properties; heat treatment; loss angle; microstructure; nickel alloy electrode; perovskite phase; remanent polarization; soda-lime glass substrate; sol-gel processing; Aluminum alloys; Buffer layers; Electrodes; Ferroelectric films; Ferroelectric materials; Heat treatment; Microstructure; Nickel alloys; Polarization; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602788