A novel RFCMOS process monitoring test structure

Author

Sia, C.B. ; Ong, B.H. ; Lim, K.M. ; Yeo, K.S. ; Do, M.A. ; Ma, J.-G. ; Alam, T.

Author_Institution

Adv. RFIC (S) Pte Ltd., Singapore, Singapore

fYear

2004

fDate

22-25 March 2004

Firstpage

45

Lastpage

50

Abstract

A novel RFCMOS process monitoring test structure has been proposed for the first time in this paper. Excellent agreement in DC and RF characteristics has been observed between conventional test structures and the new process monitoring test structure for both n and p MOSFETs of different device dimensions. This new layout approach can be extended to other devices such as MIM capacitors, diodes, MOS varactors and interconnects.

Keywords

CMOS integrated circuits; MOSFET; process monitoring; radiofrequency integrated circuits; semiconductor device testing; semiconductor technology; DC characteristics; MIM capacitors; MOS varactors; RF characteristics; RFCMOS; diodes; interconnects; n-MOSFET dimensions; p-MOSFET; process monitoring test structure; scribeline test structures; Circuit synthesis; Circuit testing; Electronic equipment testing; Foundries; Integrated circuit technology; Monitoring; Process design; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309299

Filename

1309299