DocumentCode
311787
Title
Improvement in fatigue properties of ferroelectric Bi4Ti 3O12 thin films by heat treatment in O2 gas at high pressure
Author
Okamura, Soichiro ; Yagi, Yukie ; Mori, Katsumi ; Kakimi, Atsushi ; Ando, Shizutoshi ; Tsukamoto, Takeyo
Author_Institution
Sci. Univ. of Tokyo, Japan
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
463
Abstract
Fabrication of ferroelectric Bi4Ti3O12 thin films was carried out by spin-coating pyrolysis process of metal naphthenates. The films were finally sintered at 800°C for 30 min in O2 gas with the pressures ranging from 0.1 to 0.4 MPa. In any conditions, ferroelectric Bi4Ti3O12 thin films with complete c-axis orientation were obtained. Remanent polarizations of the films were improved with increasing O2 gas pressure in sintering while coercive fields were constant. The Bi4Ti3O12 thin film sintered at the O2 gas pressure of 0.4 MPa exhibited good ferroelectric properties: the remanent polarization of 2.1 μC/cm2 and the coercive field of 66 kV/cm. The remanent polarization of the film sintered at 0.4 MPa was observed to be 95 % of the initial value after the polarization reversal of 1×109 cycles while that of the film sintered at 0.1 MPa was reduced to about half of the initial one after 1×107 cycles. Sintering at high O2 gas pressure had a great influence on the improvement of fatigue properties of ferroelectric Bi4Ti 3O12 thin films
Keywords
bismuth compounds; fatigue; ferroelectric thin films; heat treatment; pyrolysis; sintering; 0.1 to 0.4 MPa; 800 C; Bi4Ti3O12; O2 gas pressure; coercive field; fatigue; ferroelectric thin film; heat treatment; metal naphthenate; polarization reversal; remanent polarization; sintering; spin-coating pyrolysis; Bismuth; Dielectric thin films; Fabrication; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.602789
Filename
602789
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