Title :
Processing and properties of in-situ pulsed laser deposited PMN-PT thin films
Author :
Tantigate, C. ; Safari, A.
Author_Institution :
Dept. of Ceramic Sci. & Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
Thin films of PMN and PMN-PT were prepared by pulsed laser deposition (PLD) on MgO(100) and Pt coated Si substrates. Processing parameters such as substrate temperature, oxygen pressure, and substrate material have a significant effect on perovskite phase formation. Pure perovskite PMN and PMN-PT were obtained at substrate temperatures in the range of 535° to 565°C and an oxygen pressure of 200 mTorr. Perovskite PMN phase prefers to nucleate on the MgO(100) which has a smoother surface than that of the Pt coated Si substrate. An LSCO layer on Pt coated Si substrates promoted perovskite phase formation. The electrical properties of PMN and PMN-PT thin films were evaluated. A maximum dielectric constant of 4500 and dielectric loss of 0.05 at 1 kHz were obtained. The charge storage density of the films was about 100 fC/μm2 at 50 kV/cm
Keywords :
dielectric losses; ferroelectric thin films; lead compounds; permittivity; pulsed laser deposition; 200 mtorr; 535 to 565 degC; MgO; MgO(100) substrates; PMN-PbTiO3; PbMgO3NbO3-PbTiO3; Pt coated Si substrates; Pt-Si; charge storage density; dielectric constant; dielectric loss; oxygen pressure; perovskite phase formation; pulsed laser deposition; substrate temperature; thin films; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering; Temperature distribution;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602793
