Title :
A novel method to obtain 3-port network parameters from 2-port measurements [MOSFET example]
Author :
Jha, Anuranjan ; Vasi, J.M. ; Rustagi, Subhash C. ; Patil, M.B.
Author_Institution :
Dept. of Electr. Eng., IIT, Mumbai, India
Abstract :
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.
Keywords :
MOSFET; network analysis; semiconductor device measurement; semiconductor device models; two-port networks; MOSFET; four-terminal device; three-port network parameters; two-port measurements; two-port network analyzer; CMOS technology; Electric variables measurement; FETs; Helium; MOSFET circuits; Measurement techniques; Microelectronics; Radio frequency; Testing; Time measurement;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309302
