DocumentCode
3117919
Title
A novel method to obtain 3-port network parameters from 2-port measurements [MOSFET example]
Author
Jha, Anuranjan ; Vasi, J.M. ; Rustagi, Subhash C. ; Patil, M.B.
Author_Institution
Dept. of Electr. Eng., IIT, Mumbai, India
fYear
2004
fDate
22-25 March 2004
Firstpage
57
Lastpage
62
Abstract
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.
Keywords
MOSFET; network analysis; semiconductor device measurement; semiconductor device models; two-port networks; MOSFET; four-terminal device; three-port network parameters; two-port measurements; two-port network analyzer; CMOS technology; Electric variables measurement; FETs; Helium; MOSFET circuits; Measurement techniques; Microelectronics; Radio frequency; Testing; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN
0-7803-8262-5
Type
conf
DOI
10.1109/ICMTS.2004.1309302
Filename
1309302
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