• DocumentCode
    311794
  • Title

    Sr/Bi ratio effects for SrxBiyTa2O 9 grown by pulsed laser ablation

  • Author

    Thomas, Darin T. ; Fujimura, Norifumi ; Streiffer, S.K. ; Auciello, Orlando ; Kingon, Angus I.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    495
  • Abstract
    In this study we report the effect of variations in the Sr/Bi ratio on the properties of thin film strontium bismuth tantalate (SBT), one of the primary candidates for ferroelectric nonvolatile memories. The composition was varied according to the formulation Sr1-zBi2.1+2/3zTa2O9. Films were prepared by pulsed laser ablation from ceramic targets. The largest switched polarizations were measured for compositions with z=0. Results are compared to other studies where off-stoichiometric compositions yielded the largest polarizations. In attempting to reduce the processing temperatures, moderate ferroelectric properties were achieved at 650°C
  • Keywords
    bismuth compounds; dielectric polarisation; ferroelectric storage; ferroelectric thin films; pulsed laser deposition; random-access storage; strontium compounds; 650 degC; SrBiTa2O9; ceramic targets; ferroelectric nonvolatile memories; ferroelectric properties; processing temperatures; pulsed laser ablation; switched polarizations; Bismuth; Ferroelectric films; Ferroelectric materials; Laser ablation; Laser modes; Nonvolatile memory; Optical pulses; Polarization; Strontium; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.602797
  • Filename
    602797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=311794