Title :
Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates
Author :
Xu, Fei ; Trolier-McKinstry, Susan
Author_Institution :
Intercoll. Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Lead zirconate titanate thin films with a composition near the morphotropic phase boundary were prepared by the sol-gel method. Films were crystallized by a rapid thermal annealing (RTA) process. X-ray diffraction was used to monitor the crystallization of the processed films. The microstructure of the films was observed using field-emission scanning electron microscopy. The ferroelectric and dielectric properties of the PZT films fabricated under various annealing conditions were studied. The films showed good hysteresis loops with P τ=30 μC/cm2 and Ec=70 kV/cm. Piezoelectric properties were measured by both single beam and double beam interferometers
Keywords :
X-ray diffraction; dielectric hysteresis; ferroelectric thin films; lead compounds; piezoceramics; piezoelectric thin films; rapid thermal annealing; scanning electron microscopy; sol-gel processing; PZT; PZT thin film; PbZrO3TiO3; X-ray diffraction; crystallization; dielectric properties; double beam interferometry; ferroelectric properties; field-emission scanning electron microscopy; hysteresis loop; microstructure; morphotropic phase boundary; piezoelectric properties; platinum-coated silicon substrate; rapid thermal annealing; single beam interferometry; sol-gel synthesis; Crystal microstructure; Crystallization; Electrons; Ferroelectric films; Piezoelectric films; Rapid thermal annealing; Rapid thermal processing; Titanium compounds; Transistors; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602801
