Title :
Characterization of Ru electrodes for Ru/(Ba,Sr)TiO/sub 3//Ru capacitors
Author :
Yang, Doo Young ; Oh, Ki-Young ; Lee, Won-Jae ; Vellaikal, M. ; Woolcott, R.R., Jr. ; Streiffer, S.K. ; Kingon, A.I.
Author_Institution :
LG Semicon Co. Ltd., Cheongju, South Korea
Abstract :
Ion beam sputtered Ru metal films were characterized for use as electrodes on MOCVD (Ba,Sr)TiO3 in high density DRAMs, where Ru is deposited both on the polysilicon plug and on CVD SiO2. A wide process space in temperature and time was explored with the aim of achieving the highest degree of texturing, the lowest amount of silicide formation, and the least degradation of the Ru surface under an oxidizing environment. Ru deposited at 375°C showed primarily (001) texturing, and its surface was stable after a 600°C, 30 minute oxidation and a 700°C, 30 minute vacuum anneal. The final surface roughness was found to be 14 nm rms
Keywords :
DRAM chips; barium compounds; electrodes; ferroelectric capacitors; ferroelectric storage; ruthenium; sputtered coatings; strontium compounds; CVD SiO/sub 2/; DRAM; MOCVD (Ba,Sr)TiO/sub 3/; Ru electrode; Ru-(BaSr)TiO/sub 3/-Ru; Ru/(Ba,Sr)TiO/sub 3//Ru capacitor; ion beam sputtered metal film; oxidation; polysilicon plug; silicide formation; surface roughness; texturing; Degradation; Electrodes; Ion beams; MOCVD; Plugs; Rough surfaces; Silicides; Surface roughness; Surface texture; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ, USA
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602802
